More conference paper

  1. M. Hua*, J. Chen, C. Wang, L. Li, L. Liu, Z. Zheng, and K. J. Chen, “E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability,” in 2021 IEEE 14th International Conference on ASIC (ASICON), 2021, pp. 1–4, doi: 10.1109/ASICON52560.2021.9620369.

  2. M. Hua*, C. Wang, J. Chen, L. Zhang, Z. Zheng, and K. J. Chen, “Gate Reliability and VTH Stability Investigations of p-GaN HEMTs,” in 2020 IEEE 15th International Conference on Solid-State Integrated Circuit Technology (ICSICT), 2020, pp. 1–4, doi: 10.1109/ICSICT49897.2020.9278305. (invited)

  3. Y. Wang*, G. Lyu, J. Wei, Z. Zheng, K. Zhong, and K. J. Chen, “All-WBG Cascode Device with p-GaN Gate HEMT and SiC JFET for High-Frequency and High-Temperature Power Switching Applications,” in 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2020, pp. 1–5, doi: 10.1109/WiPDAAsia49671.2020.9360291.

  4. W. Song*, Z. Zheng, J. Lei, J. Wei, L. Yuan, and K. J. Chen, “Double-Channel High-Electron-Mobility Transistor for Linearity Enhancement in RF/Microwave Applications,” in 2019 Compound Semiconductor Week (CSW), 2019, pp. 1–1, doi: 10.1109/ICIPRM.2019.8819146.

  5. S. Yang, S. Huang, J. Wei, Y. Wang, Z. Zheng, J. He, and J. Chen, “DLTS Investigation of Transient Capacitance and Trap States on p-GaN Gate HEMT Structures,” presented at the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Bellevue, Washington, United States, 2019.

  6. M. Hua*, S. Yang, J. Wei, Z. Zheng, J. He, and K. J. Chen, “Reverse-Bias Stability and Reliability of Enhancement-mode GaN-based MIS-FET,” in 2019 IEEE 13th International Conference on ASIC (ASICON), 2019, pp. 1–4, doi: 10.1109/ASICON47005.2019.8983535. (invited)

  7. Y. Wang, M. Hua, G. Tang, Z. Zheng, S. Yang, and J. Chen, “Dynamic OFF-State Leakage Current (IOFF) in GaN power HEMTs,” presented at the International Workshop on Nitride Semiconductor 2018 (IWN2018), Kanazawa, Japan, 2018.


Note:   corresponding authors*,   authors with equal contribution
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