Project

“Gallium Nitride-Based Extreme-Temperature Electronics,” co-I, CAS-Croucher Funding Scheme for Joint Laboratories, Croucher Foundation, since 2022, ongoing.

“A Novel p-GaN Gate Double-Channel HEMT Technology for High-Frequency Power Electronics and Amplifiers,” co-I, Innovation and Technology Fund (ITF), Innovation and Technology Commission, since 2022, ongoing.

“p-channel MOSFET technology based on GaN-on-Si p-GaN gate power HEMT platform: toward high-functionality high-efficiency GaN power integration,” co-I, Shenzhen-Hong Kong-Macau Science and Technology Program (Category C), Shenzhen Science and Technology Innovation Committee, since 2021, ongoing.

“Research on a GaN/SiC Hybrid Field Effect Transistor,” co-I, Shenzhen Science and Technology Program, Shenzhen Science and Technology Innovation Committee, 2018 ~ 2022.