IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

2023

  1. Y. Wu, M. Nuo, J. Yang, Z. Zheng, L. Zhang, K. J. Chen, M. Hua, Y. Hao, X. Yang, B. Shen, M. Wang, and J. Wei, “High Dynamic Stability in Enhancement-Mode Active-Passivation p-GaN Gate HEMT,” in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, pp. 378–381, doi: 10.1109/ISPSD57135.2023.10147690.

  2. H. Liao, Z. Zheng*, T. Chen, L. Zhang, Y. Cheng, L. Chen, L. Yuan, and K. J. Chen*, “Conductivity Enhancement Induced by Confined Vicinal Hole Storage in Enhancement-mode p-GaN Gate Double-Channel HEMTs,” in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, pp. 231–234, doi: 10.1109/ISPSD57135.2023.10147434.

  3. J. Shu, J. Sun, Z. Zheng, and K. J. Chen, “Protection of SiC MOSFET from Negative Gate Voltage Spikes with a Low-Voltage GaN HEMT,” in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, pp. 199–202, doi: 10.1109/ISPSD57135.2023.10147444.

  4. J. Shu, J. Sun, Z. Zheng, and K. J. Chen, “Suppressing the Reverse Recovery of Si Super-Junction MOSFET with a Low-Voltage GaN HEMT in a Cascode Configuration,” in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, pp. 131–134, doi: 10.1109/ISPSD57135.2023.10147632.

  5. J. Chen, T. Chen, Z. Jiang, C. Wang, Z. Zheng, J. Wei, K. J. Chen, and M. Hua, “Switching Performance of GaN p-FET-bridge (PFB-) HEMTs Studied with Mixed-mode TCAD Simulation,” in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, pp. 107–110, doi: 10.1109/ISPSD57135.2023.10147458.

  6. J. Sun, Z. Zheng, L. Zhang, Y. H. Ng, J. Shu, T. Chen, and K. J. Chen, “Impact of Inadequate Mg Activation on Dynamic Threshold Voltage of Schottky-type p-GaN Gate HEMTs,” in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, pp. 24–27, doi: 10.1109/ISPSD57135.2023.10147398.

2022

  1. H. Xu, Z. Zheng*, L. Zhang, J. Sun, S. Yang, J. He, J. Wei, and K. J. Chen*, “Dynamic Interplays of Gate Junctions in Schottky-type p-GaN Gate Power HEMTs during Switching Operation,” in 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022, pp. 325–328, doi: 10.1109/ISPSD49238.2022.9813627.

  2. J. Sun*, Z. Zheng, L. Zhang, and K. J. Chen*, “Correlation between Pulse I-V and Human Body Model (HBM) Tests for Drain Electrostatic Discharge (ESD) Robustness Evaluation of GaN Power HEMTs,” in 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022, pp. 73–76, doi: 10.1109/ISPSD49238.2022.9813597.

  3. Y. Cheng, H. Xu, L. Zhang, T. Chen, J. Chen, Z. Zheng, and K. J. Chen*, “Reliability Evaluation of p-GaN Gate HEMTs in Bootstrap Circuit,” in 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022, pp. 129–132, doi: 10.1109/ISPSD49238.2022.9813687.

2021

  1. L. Zhang, S. Yang, Z. Zheng, W. Song, H. Liao, and K. J. Chen*, “Surface Reinforcement Technology for Suppressing Hot-Carrier-Induced Degradations in p-GaN Gate Power HEMTs,” in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021, pp. 43–46, doi: 10.23919/ISPSD50666.2021.9452259.

  2. J. Sun*, K. Zhong, Z. Zheng, G. Lyu, and K. J. Chen*, “Comparison of Short Circuit Robustness and Failure Mechanisms of GaN/SiC Cascode Devices and SiC Power MOSFETs,” in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021, pp. 207–210, doi: 10.23919/ISPSD50666.2021.9452266.

  3. Y. Cheng*, Y. Wang, S. Feng, Z. Zheng, T. Chen, G. Lyu, Y. H. Ng, and K. J. Chen*, “Impact Ionization Induced Breakdown and Related HTRB Behaviors in 100-V p-GaN Gate HEMTs,” in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021, pp. 1–4, doi: 10.23919/ISPSD50666.2021.9452204.

  4. K. Zhong*, H. Xu, S. Yang, Z. Zheng, J. Chen, and K. J. Chen*, “A Bootstrap Voltage Clamping Circuit for Dynamic VTH Characterization in Schottky-Type p-GaN Gate Power HEMT,” in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021, pp. 39–42, doi: 10.23919/ISPSD50666.2021.9452232.

2020

  1. Z. Zheng, W. Song, L. Zhang, S. Yang, H. Xu, R. K.-Y. Wong, J. Wei*, and K. J. Chen*, “Enhancement-Mode GaN p-Channel MOSFETs for Power Integration,” in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, pp. 525–528, doi: 10.1109/ISPSD46842.2020.9170081.

  2. L. Zhang, J. Wei*, Z. Zheng, W. Song, S. Yang, S. Feng, and K. J. Chen*, “700-V p-GaN Gate HEMT with Low-Voltage Third Quadrant Operation Using Area-Efficient Built-in Diode,” in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, pp. 521–524, doi: 10.1109/ISPSD46842.2020.9170075.

  3. H. Xu*, J. Wei*, R. Xie, Z. Zheng, and K. J. Chen*, “A SPICE-Compatible Equivalent-Circuit Model of Schottky Type p-GaN Gate Power HEMTs with Dynamic Threshold Voltage,” in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, pp. 325–328, doi: 10.1109/ISPSD46842.2020.9170086.

  4. J. Sun*, J. Wei, Z. Zheng, G. Lyu, and K. J. Chen*, “Distinct Short Circuit Capability of 650-V p-GaN Gate HEMTs under Single and Repetitive Tests,” in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, pp. 313–316, doi: 10.1109/ISPSD46842.2020.9170148.

  5. G. Lyu*, Y. Wang, J. Wei, Z. Zheng, J. Sun, and K. J. Chen*, “Dv/Dt-control of 1200-V Co-packaged SiC-JFET/GaN-HEMT Cascode Device,” in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, pp. 86–89, doi: 10.1109/ISPSD46842.2020.9170127.

  6. J. He*, J. Wei, Z. Zheng, S. Yang, Y. Li, B. Huang, and K. J. Chen*, “Low-Temperature Accelerated Gate Reliability of Schottky-type p-GaN Gate HEMTs,” in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, pp. 290–293, doi: 10.1109/ISPSD46842.2020.9170191.

2019

  1. Z. Zheng*, M. Hua, J. Wei, Z. Zhang, and K. J. Chen*, “Identifying the Location of Hole-Induced Gate Degradation in LPCVD-SiNx/GaN MIS-FETs under High Reverse-Bias Stress,” in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 435–438, doi: 10.1109/ISPSD.2019.8757652.

  2. J. Wei*, M. Zhang, H. Jiang, B. Li, Z. Zheng, and K. J. Chen*, “Investigations of p-Shielded SiC Trench IGBT with Considerations on IE Effect, Oxide Protection and Dynamic Degradation,” in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 199–202, doi: 10.1109/ISPSD.2019.8757642.

  3. J. Sun*, J. Wei, Z. Zheng, Y. Wang, and K. J. Chen*, “Repetitive Short Circuit Energy Dependent VTH Instability of 1.2kV SiC Power MOSFETs,” in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 263–266, doi: 10.1109/ISPSD.2019.8757639.

  4. J. Lei*, J. Wei, G. Tang, Z. Zhang, Q. Qian, M. Hua, Z. Zheng, Y. Wang, and K. J. Chen*, “Charge-Modulated Schottky Barrier Lowering Effect in GaN Double-Channel Lateral Power SBDs with Gated Anode,” in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 459–462, doi: 10.1109/ISPSD.2019.8757606.

  5. M. Hua*, S. Yang, Z. Zheng, J. Wei, Z. Zhang, and K. J. Chen*, “Effects of Substrate Termination on Reverse-bias Stress Reliability of Normally-off Lateral GaN-on-Si MIS-FETs,” in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 467–470, doi: 10.1109/ISPSD.2019.8757600.


Note:   corresponding authors*,   authors with equal contribution
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