IEEE International Electron Device Meeting (IEDM)

2021

  1. L. Zhang, Z. Zheng*, Y. Cheng, Y. H. Ng, S. Feng, W. Song, T. Chen, and K. J. Chen*, “SiN/in-situ-GaON Staggered Gate Stack on p-GaN for Enhanced Stability in Buried-Channel GaN p-FETs,” in 2021 IEEE International Electron Device Meeting (IEDM), 2021, p. 5.3.1-5.3.4, doi: 10.1109/IEDM19574.2021.9720653.

  2. G. Lyu, J. Wei*, W. Song, Z. Zheng, L. Zhang, J. Zhang, Y. Cheng, S. Feng, Y. H. Ng, T. Chen, K. Zhong, J. Liu, R. Zeng, and K. J. Chen*, “A GaN Power Integration Platform Based on Engineered Bulk Si Substrate with Eliminated Crosstalk between High-Side and Low-Side HEMTs,” in 2021 IEEE International Electron Devices Meeting (IEDM), 2021, p. 5.2.1-5.2.4, doi: 10.1109/IEDM19574.2021.9720505.

2020

  1. K. J. Chen*, J. Wei, G. Tang, H. Xu, Z. Zheng, L. Zhang, and W. Song, “Planar GaN Power Integration – The World is Flat,” in 2020 IEEE International Electron Devices Meeting (IEDM), 2020, p. 27.1.1-27.1.4, doi: 10.1109/IEDM13553.2020.9372069. (invited)

  2. M. Hua*, J. Chen, C. Wang, L. Liu, L. Li, J. Zhao, Z. Jiang, J. Wei, L. Zhang, Z. Zheng, and K. J. Chen, “E-mode p-GaN Gate HEMT with p-FET Bridge for Higher VTH and Enhanced VTH Stability,” in 2020 IEEE International Electron Devices Meeting (IEDM), 2020, p. 23.1.1-23.1.4, doi: 10.1109/IEDM13553.2020.9371969.

2018

  1. M. Hua*, X. Cai, S. Yang, Z. Zhang, Z. Zheng, J. Wei, N. Wang, and K. J. Chen, “Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline GaOxN1-x Channel,” in 2018 IEEE International Electron Devices Meeting (IEDM), 2018, p. 30.3.1-30.3.4, doi: 10.1109/IEDM.2018.8614687.

2017

  1. J. Lei*, J. Wei, G. Tang, Q. Qian, M. Hua, Z. Zhang, Z. Zheng, and K. J. Chen, “An interdigitated GaN MIS-HEMT/SBD normally-off power switching device with low ON-resistance and low reverse conduction loss,” in 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2017, p. 25.2.1-25.2.4, doi: 10.1109/IEDM.2017.8268456.

  2. M. Hua*, J. Wei, Q. Bao, J. He, Z. Zhang, Z. Zheng, J. Lei, and K. J. Chen, “Reverse-bias stability and reliability of hole-barrier-free E-mode LPCVD-SiNx/GaN MIS-FETs,” in 2017 IEEE International Electron Devices Meeting (IEDM), 2017, p. 33.2.1-33.2.4, doi: 10.1109/IEDM.2017.8268489.


Note:   corresponding authors*,   authors with equal contribution
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