Journal paper in 2018 & before

  1. M. Hua, J. Wei, Q. Bao, Z. Zheng, Z. Zhang, J. He, and K. J. Chen*, “Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET,” IEEE Trans. Electron Devices, vol. 65, no. 9, pp. 3831–3838, Sep. 2018, doi: 10.1109/TED.2018.2856998.

  2. Y. Wang, M. Hua, G. Tang, J. Lei, Z. Zheng, J. Wei, and K. J. Chen*, “Dynamic OFF-State Current (Dynamic IOFF) in p-GaN Gate HEMTs with an Ohmic Gate Contact,” IEEE Electron Device Lett., vol. 39, no. 9, pp. 1366–1369, Sep. 2018, doi: 10.1109/LED.2018.2852699.

  3. J. Lei, J. Wei, G. Tang, Z. Zhang, Q. Qian, Z. Zheng, M. Hua, and K. J. Chen*, “Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT With Low Reverse Leakage Current and Low ON-State Resistance,” IEEE Electron Device Lett., vol. 39, no. 7, pp. 1003–1006, Jul. 2018, doi: 10.1109/LED.2018.2832180.

  4. M. Hua, J. Wei, Q. Bao, Z. Zhang, Z. Zheng, and K. J. Chen*, “Dependence of VTH Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET,” IEEE Electron Device Lett., vol. 39, no. 3, pp. 413–416, Mar. 2018, doi: 10.1109/LED.2018.2791664.

  5. J. Lei, J. Wei, G. Tang, Z. Zhang, Q. Qian, Z. Zheng, M. Hua, and K. J. Chen*, “650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode,” IEEE Electron Device Lett., vol. 39, no. 2, pp. 260–263, Feb. 2018, doi: 10.1109/LED.2017.2783908.

  6. P. Wang, S. Lin*, G. Ding, X. Li, Z. Wu, S. Zhang, Z. Xu, S. Xu, Y. Lu, W. Xu, and Z. Zheng, “Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots,” Appl. Phys. Lett., vol. 108, no. 16, p. 163901, Apr. 2016, doi: 10.1063/1.4946856.


Note:   corresponding authors*,   authors with equal contribution
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