Journal paper in 2023

  1. T. Chen, Z. Zheng*, S. Feng, L. Zhang, and K. J. Chen*, “Endurance Improvement of GaN Bipolar Charge Trapping Memory with Back Gate Injection,” IEEE Electron Device Lett., 2023, doi: 10.1109/LED.2023.3299961. (early access)

  2. J. Chen, J. Zhao, S. Feng, L. Zhang, Y. Cheng, H. Liao, Z. Zheng, X. Chen, Z. Gao, K. J. Chen, and M. Hua*, “Formation and Applications in Electronic Devices of Lattice-Aligned Gallium Oxynitride Nanolayer on Gallium Nitride,” Adv. Mater., vol. 35, no. 12, p. 2208960, Jan. 2023, doi: 10.1002/adma.202208960.

  3. Y. Cheng, Y. H. Ng, Z. Zheng, and K. J. Chen, “RF Enhancement-Mode p-GaN Gate HEMT on 200mm-Si Substrates,” IEEE Electron Device Lett., vol. 44, no. 1, pp. 29–31, Jan. 2023, doi: 10.1109/LED.2022.3220693.

  4. Y. Wu, J. Wei, M. Wang, M. Nuo, J. Yang, W. Lin, Z. Zheng, L. Zhang, M. Hua, X. Yang, Y. Hao, K. J. Chen, and B. Shen, “An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps,” IEEE Electron Device Lett., vol. 44, no. 1, pp. 25–28, Jan. 2023, doi: 10.1109/LED.2022.3222170.


Note:   corresponding authors*,   authors with equal contribution
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