Journal paper in 2022

  1. J. Gong, Z. Zheng, D. Vincent, J. Zhou, J. Kim, D. Kim, T. K. Ng, B. S. Ooi, K. J. Chen, and Z. Ma*, “Interfacial band parameters of ultrathin ALD–Al2O3, ALD–HfO2, and PEALD–AlN/ALD–Al2O3 on c-plane, Ga-face GaN through XPS measurements,” J. Appl. Phys., vol. 132, no. 13, p. 135302, Oct. 2022, doi: 10.1063/5.0106485.

  2. L. Zhang, Z. Zheng*, W. Song, T. Chen, S. Feng, J. Chen, M. Hua, and K. J. Chen*, “Gate Leakage and Reliability of GaN p-Channel FET with SiNx/GaON Staggered Gate Stack,” IEEE Electron Device Lett., vol. 43, no. 11, pp. 1822–1825, Nov. 2022, doi: 10.1109/LED.2022.3206470. (editor's pick)

  3. H. Liao, Z. Zheng*, T. Chen, L. Zhang, Y. Cheng, S. Feng, Y. H. Ng, L. Chen, L. Yuan, and K. J. Chen*, “Normally-OFF p-GaN Gate Double-Channel HEMT with Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation,” IEEE Electron Device Lett., vol. 43, no. 9, pp. 1424–1427, Sep. 2022, doi: 10.1109/LED.2022.3195489.

  4. Y. Cheng, J. He, H. Xu, K. Zhong, Z. Zheng, J. Sun, and K. J. Chen*, “Gate Reliability of Schottky-Type p-GaN Gate HEMTs under AC Positive Gate Bias Stress with a Switching Drain Bias,” IEEE Electron Device Lett., vol. 43, no. 9, pp. 1404–1407, Sep. 2022, doi: 10.1109/LED.2022.3188555.

  5. G. Lyu*, J. Wei*, W. Song, Z. Zheng, L. Zhang, J. Zhang, S. Feng, and K. J. Chen*, “GaN on Engineered Bulk Si (GaN-on-EBUS) Substrate for Monolithic Integration of High-/Low-Side Switches in Bridge Circuits,” IEEE Trans. Electron Devices, vol. 69, no. 8, pp. 4162–4169, Aug. 2022, doi: 10.1109/TED.2022.3178361.

  6. J. Sun, K. Zhong, Z. Zheng, G. Lyu, and K. J. Chen*, “Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs,” IEEE Trans. Ind. Electron., vol. 69, no. 7, pp. 7340–7348, Jul. 2022, doi: 10.1109/TIE.2021.3099247.

  7. H. Xu, G. Tang, J. Wei, Z. Zheng, and K. J. Chen*, “Monolithic Integration of Gate Driver and Protection Modules With P-GaN Gate Power HEMTs,” IEEE Trans. Ind. Electron., vol. 69, no. 7, pp. 6784–6793, Jul. 2022, doi: 10.1109/TIE.2021.3102387.

  8. T. Chen, Z. Zheng*, S. Feng, L. Zhang, W. Song, and K. J. Chen*, “GaN Non-Volatile Memory Based on Junction Barrier-Controlled Bipolar Charge Trapping,” IEEE Electron Device Lett., vol. 43, no. 5, pp. 697–700, May 2022, doi: 10.1109/LED.2022.3161010.

  9. S. Feng, Z. Zheng*, Y. Cheng, Y. H. Ng, W. Song, T. Chen, L. Zhang, K. Liu, K. Cheng, and K. J. Chen*, “Strain release in GaN epitaxy on 4° off-axis 4H-SiC,” Advanded Materials, vol. 34, no. 23, p. 2201169, Apr. 2022.

  10. W. Song, J. Zhang, Z. Zheng, S. Feng, X. Yang, B. Shen, and K. J. Chen*, “GaN HEMTs on low resistivity Si substrates with thick buffer layers for RF signal amplification and power conversion,” AIP Advances, vol. 12, no. 4, p. 045125, Apr. 2022, doi: 10.1063/5.0086957.

  11. Z. Zheng, T. Chen, L. Zhang, W. Song, and K. J. Chen*, “Unveiling the parasitic electron channel under the gate of enhancement-mode p-channel GaN field-effect transistors on the p-GaN/AlGaN/GaN platform,” Appl. Phys. Lett., vol. 120, no. 15, p. 152102, Apr. 2022, doi: 10.1063/5.0086954. (invited)

  12. J. Wei, L. Zhang, Z. Zheng, W. Song, S. Yang, and K. J. Chen*, “ON-Resistance Analysis of GaN Reverse-Conducting HEMT With Distributive Built-In SBD,” IEEE Trans. Electron Devices, vol. 69, no. 2, pp. 644–649, Feb. 2022, doi: 10.1109/TED.2021.3133847.


Note:   corresponding authors*,   authors with equal contribution
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