Journal paper in 2021

  1. Z. Zheng, H. Xu, L. Zhang, and K. J. Chen*, “On the operating speed and energy efficiency of GaN-based monolithic complementary logic circuits for integrated power conversion systems,” Fundamental Research, vol. 1, no. 6, pp. 661–671, Nov. 2021, doi: 10.1016/j.fmre.2021.09.015. (invited)

  2. Z. Zheng, L. Zhang, W. Song, T. Chen, S. Feng, J. Sun, H. Xu, S. Yang, J. Wei, and K. J. Chen*, “Threshold Voltage Instability of Enhancement-mode GaN Buried p-Channel MOSFETs,” IEEE Electron Device Lett., vol. 42, no. 11, pp. 1584–1587, Nov. 2021, doi: 10.1109/LED.2021.3114776.

  3. J. Sun, Z. Zheng, K. Zhong, G. Lyu, and K. J. Chen*, “Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices,” IEEE Trans. Power Electron., vol. 36, no. 11, pp. 12158–12162, Nov. 2021, doi: 10.1109/TPEL.2021.3076002.

  4. J. Sun, J. Wei, Z. Zheng, and K. J. Chen*, “Short Circuit Capability Characterization and Analysis of p-GaN Gate HEMTs under Single and Repetitive Tests,” IEEE Trans. Ind. Electron., vol. 68, no. 9, pp. 8798-8807, Sept. 2021, doi: 10.1109/TIE.2020.3009603.

  5. Y. Wang, T. Chen, M. Hua, J. Wei, Z. Zheng, W. Song, S. Yang, K. Zhong, and K. J. Chen*, “A Physics-Based Empirical Model of Dynamic IOFF Under Switching Operation in p-GaN Gate Power HEMTs,” IEEE Trans. Power Electron., vol. 36, no. 9, pp. 9796–9805, Sep. 2021, doi: 10.1109/TPEL.2021.3062450.

  6. Z. Zheng*, L. Zhang, W. Song, S. Feng, H. Xu, J. Sun, S. Yang, T. Chen, J. Wei, and K. J. Chen*, “Gallium nitride-based complementary logic integrated circuits,” Nature Electronics, vol. 4, no. 8, pp. 595–603, Aug. 2021, doi: 10.1038/s41928-021-00611-y.

  7. L. Zhang, Z. Zheng, S. Yang, W. Song, S. Feng, and K. J. Chen*, “Characterization of GaON as a surface reinforcement layer of p-GaN in Schottky-type p-GaN gate HEMTs,” Appl. Phys. Lett., vol. 119, no. 5, p. 053503, Aug. 2021, doi: 10.1063/5.0053252. (editor’s pick)

  8. W. Song, Z. Zheng, T. Chen, J. Wei, L. Yuan, and K. J. Chen*, “RF Linearity Enhancement of GaN-on-Si HEMTs with a Closely Coupled Double-Channel Structure,” IEEE Electron Device Lett., vol. 42, no. 8, pp. 1116–1119, Aug. 2021, doi: 10.1109/LED.2021.3087785.

  9. J. Chen, M. Hua*, C. Wang, L. Liu, L. Li, J. Wei, L. Zhang, Z. Zheng, and K. J. Chen, “Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs,” IEEE Electron Device Lett., vol. 42, no. 7, pp. 986–989, Jul. 2021, doi: 10.1109/LED.2021.3077081.

  10. J. Chen, M. Hua*, J. Wei, J. He, C. Wang, Z. Zheng, and K. J. Chen, “OFF-state Drain-voltage-stress-induced VTH Instability in Schottky-type p-GaN Gate HEMTs,” IEEE J. Emerg. Sel. Top. Power Electron., vol. 9, no. 3, pp. 3686-3694, June 2021, doi: 10.1109/JESTPE.2020.3010408.

  11. H. Xu, J. Wei, R. Xie, Z. Zheng, J. He, and K. J. Chen*, “Incorporating the Dynamic Threshold Voltage Into the SPICE Model of Schottky-Type p-GaN Gate Power HEMTs,” IEEE Trans. Power Electron., vol. 36, no. 5, pp. 5904–5914, May 2021, doi: 10.1109/TPEL.2020.3030708.

  12. M. Hua*, C. Wang, J. Chen, J. Zhao, S. Yang, L. Zhang, Z. Zheng, J. Wei, and K. J. Chen, “Gate Current Transport in Enhancement-Mode p-n Junction/AlGaN/GaN (PNJ) HEMT,” IEEE Electron Device Lett., vol. 42, no. 5, pp. 669–672, May 2021, doi: 10.1109/LED.2021.3068296.

  13. G. Lyu, Y. Wang, J. Wei, Z. Zheng, and K. J. Chen*, “Dv/Dt-Control of 1200-V Normally-off SiC-JFET/GaN-HEMT Cascode Device,” IEEE Trans. Power Electron., vol. 36, no. 3, pp. 3312–3322, Mar. 2021, doi: 10.1109/TPEL.2020.3015211.

  14. S. Yang, Z. Zheng, L. Zhang, W. Song, and K. J. Chen*, “GaN MIS-HEMTs With Surface Reinforcement for Suppressed Hot-Electron-Induced Degradation,” IEEE Electron Device Lett., vol. 42, no. 4, pp. 489–492, Apr. 2021, doi: 10.1109/LED.2021.3057933.

  15. Y. Cheng, Y. Wang, S. Feng, Z. Zheng, T. Chen, G. Lyu, Y. H. Ng, and K. J. Chen*, “Observation and characterization of impact ionization-induced OFF-state breakdown in Schottky-type p-GaN gate HEMTs,” Appl. Phys. Lett., vol. 118, no. 16, p. 163502, Apr. 2021, doi: 10.1063/5.0048068.

  16. K. Zhong, H. Xu, Z. Zheng, J. Chen, and K. J. Chen*, “Characterization of Dynamic Threshold Voltage in Schottky-Type p-GaN Gate HEMT Under High-Frequency Switching,” IEEE Electron Device Lett., vol. 42, no. 4, pp. 501–504, Apr. 2021, doi: 10.1109/LED.2021.3062656.

  17. Z. Zheng, W. Song, L. Zhang, S. Yang, J. Wei, and K. J. Chen*, “Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters,” IEEE Electron Device Lett., vol. 42, no. 1, pp. 26–29, Jan. 2021, doi: 10.1109/LED.2020.3039264. (editor’s pick)

  18. L. Zhang, Z. Zheng, S. Yang, W. Song, J. He, and K. J. Chen*, “p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability,” IEEE Electron Device Lett., vol. 42, no. 1, pp. 22–25, Jan. 2021, doi: 10.1109/LED.2020.3037186.


Note:   corresponding authors*,   authors with equal contribution
back to top