Journal paper in 2019

  1. Q. Qian*, J. Lei, J. Wei, Z. Zhang, G. Tang, K. Zhong, Z. Zheng, and K. J. Chen*, “2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current,” Npj 2D Mater. Appl., vol. 3, no. 24, Dec. 2019, doi: 10.1038/s41699-019-0106-6.

  2. Y. Wang, G. Lyu, J. Wei, Z. Zheng, J. Lei, W. Song, L. Zhang, M. Hua, and K. J. Chen*, “A 1200-V GaN/SiC cascode device with E-mode p-GaN gate HEMT and D-mode SiC junction field-effect transistor,” Appl. Phys. Express, vol. 12, no. 10, p. 106505, Oct. 2019, doi: 10.7567/1882-0786/ab4741.

  3. J. Lei, J. Wei, G. Tang, Q. Qian, Z. Zhang, M. Hua, Z. Zheng, and K. J. Chen*, “Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor With Interdigital Built-in Schottky Barrier Diode,” IEEE Trans. Electron Devices, vol. 66, no. 5, pp. 2106–2112, May 2019, doi: 10.1109/TED.2019.2904038.

  4. M. Hua*, X. Cai, S. Yang, Z. Zhang, Z. Zheng, N. Wang, and K. J. Chen*, “Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN Channel into Crystalline Gallium Oxynitride,” ACS Appl. Electron. Mater., vol. 1, no. 5, pp. 642–648, Apr. 2019, doi: 10.1021/acsaelm.8b00102.

  5. J. Sun, J. Wei, Z. Zheng, Y. Wang, and K. J. Chen*, “Short Circuit Capability and Short Circuit Induced VTH Instability of a 1.2-kV SiC Power MOSFET,” IEEE J. Emerg. Sel. Top. Power Electron., vol. 7, no. 3, pp. 1539–1546, Mar. 2019, doi: 10.1109/JESTPE.2019.2912623.

  6. X. Cai, M. Hua, Z. Zhang, S. Yang, Z. Zheng, Y. Cai, K. J. Chen*, and N. Wang*, “Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel,” Appl. Phys. Lett., vol. 114, no. 5, p. 053109, Feb. 2019, doi: 10.1063/1.5078767.


Note:   corresponding authors*,   authors with equal contribution
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